Power Field-Effect Transistors Active Decline

ZVN4206GVTA

Manufacturer: Diodes

Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Part Number: ZVN4206GVTA
Generic: ZVN4206
CAGE Code: 12060,6M0U4
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 1996
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates ZVN4206GV Diodes
Functional Equivalent ZVN4206GV Diodes
FFF Alternates ZVN4206GVTC Diodes
Functional Equivalent ZVN4206GVTC Diodes
Pricing & Availability
20841 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details