Power Field-Effect Transistors NRFND Decline

DMG6968U-7

Manufacturer: Diodes

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL ENHANCEMENT MODE MOSFET
Part Number: DMG6968U-7
Generic: DMG6968
CAGE Code: 12060,6M0U4
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2009
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD17318Q2 TI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip