Mitsubishi
267 Products Available
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, …
MEDIUM POWER SWITCHING USE INSULATED TYPE IGBT MODULE
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, …
HVIGBT MODULE
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
IGBT MODULE
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, …
HVIGBT MODULE
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
IGBT MODULE
All Products (267)
Bridge Rectifier Diode, 3 Phase, 150A, 800V V(RRM), …
MEDIUM POWER GENERAL USE INSULATED TYPE BRIDGE RECTIFIER
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, …
IGBT MODULE
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium …
L & S BAND GAAS FET [ NON-MATCHED ]
Insulated Gate Bipolar Transistor, 1800A I(C), 1700V V(BR)CES, …
MITSUBISHI HVIGBT MODULE
Narrow Band High Power Amplifier, 210MHz Min, 270MHz …
SILICON MOS FET POWER AMPLIFIER, 210-270MHZ 30W MOBILE RADIO
Insulated Gate Bipolar Transistor
HIGH VOLTAGE INSULATED GATE BIPOLAR TRANSISTOR: HVIGBT
Bridge Rectifier Diode, 3 Phase, 40A, 800V V(RRM), …
MEDIUM POWER GENERAL USE INSULATED TYPE DIODE MODULE
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium …
5.9-6.4 GHZ BAND 10W INTERNALLY MATCHED GAAS FET
Volume Control Circuit, 2 Channel(s), PSIP10
DUAL VCA FOR ELECTRONIC VOLUME CONTROL
RF Small Signal Field-Effect Transistor, 1-Element, X Band, …
LOW NOISE GAAS FET
Narrow Band High Power Amplifier, 806MHz Min, 825MHz …
806-825/851-870 MHZ 20 WATTS MOBILE RADIO SILICON MOS FET POWER …
Narrow Band High Power Amplifier, 450MHz Min, 520MHz …
450-520 MHZ 30 W 12.5 V, ROHS COMPLIANCE, 2 STAGE …
Narrow Band High Power Amplifier, 889MHz Min, 941MHz …
889-941 MHZ 3.6 W 7.2 V, ROHS COMPLIANCE, 2 STAGE …
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, …
IGBT MODULE
AC Motor Controller, 200A, Hybrid
INTELLIGENT POWER MODULE IN FLAT-BASE TYPE INSULATED PACKAGE
Standard SRAM, 32KX8, 45ns, CMOS, PDSO28
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, …
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULE
AC Motor Controller, 150A, Hybrid
INTELLIGENT POWER MODULE IN FLAT-BASE TYPE INSULATED PACKAGE
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, …
HIGH POWER SWITCHING USE IGBT MODULE
Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, …
MITSUBISHI HVIGBT MODULE
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, …
HIGH POWER SWITCHING USE IGBT MODULE
Parallel I/O Port, 24 I/O, NMOS, PDIP40
PROGRAMMABLE PERIPHERAL INTERFACE
DDR DRAM Module, 256MX72, 0.75ns, CMOS
19,327,352,830-BIT (268,435,456-WORD BY 72-BIT) DOUBLE DATA RATE SYNCHRONOUS DRAM MODULE
SRAM Module, 128KX8, 120ns, CMOS
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
Insulated Gate Bipolar Transistor, 600A I(C), 650V V(BR)CES, …
IGBT Module
Narrow Band Medium Power Amplifier, 896MHz Min, 941MHz …
ROHS COMPLIANCE, 896-941 MHZ 45 W 12.8 V, 2 STAGE …
Magnetic Circuit Breaker, 1 Pole(s), 7A, 250VAC, 65VDC, …
CIRCUIT PROTECTOR