Mitsubishi
267 Products Available
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, …
MEDIUM POWER SWITCHING USE INSULATED TYPE IGBT MODULE
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, …
HVIGBT MODULE
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
IGBT MODULE
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, …
HVIGBT MODULE
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
IGBT MODULE
All Products (267)
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, …
MEDIUM POWER SWITCHING USE INSULATED TYPE IGBT MODULE
Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, …
HVIGBT MODULE
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
IGBT MODULE
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, …
HVIGBT MODULE
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
IGBT MODULE
Standard SRAM, 256KX1, 20ns, CMOS, PDSO24
262144-BIT (262144-WORD BY 1-BIT) CMOS STATIC RAM
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULE
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, …
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULE
AC Motor Controller, 800A
INTELLIGENT POWER MODULE IN FLAT-BASE TYPE INSULATED PACKAGE
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor …
Silicon RF Power MOS FET
Insulated Gate Bipolar Transistor, 200A I(C), 650V V(BR)CES, …
IGBT MODULE
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54
(4-BANK X 2,097,152-WORD X 16-BIT) 128M SYNCHRONOUS DRAM
Magnetic Circuit Breaker, 1 Pole(s), 2A, 250VAC, 65VDC, …
CIRCUIT PROTECTOR
Narrow Band High Power Amplifier, 820MHz Min, 851MHz …
820-851MHZ 6W 12.5V, 3 STAGE AMP. RF MOSFET MODULE FOR …
Rectifier Diode, 1 Phase, 2 Element, 250A, 800V …
HIGH POWER GENERAL USE INSULATED TYPE DIODE MODULE
Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, …
IGBT MODULE
Narrow Band High Power Amplifier, 880MHz Min, 915MHz …
880-915 MHZ 13 W 12.5 V, ROHS COMPLIANCE , 3 …
Narrow Band High Power Amplifier, 135MHz Min, 175MHz …
135-175 MHZ 6.5 W 7.2 V, ROHS COMPLIANCE, 2 STAGE …
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, …
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULE
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium …
L, S BAND POWER GAAS FET
Power Bipolar Transistor, 75A I(C), 2-Element, NPN, Silicon, …
INSULATED TYPE TRANSISTOR MODULE FOR HIGH POWER SWITCHING USE
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor …
70 W, 175 MHZ, 530 MHZ SILICON MOSFET POWER TRANSISTOR
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, …
TAPE CARRIER SMALL SIGNAL GAAS FET
AC Motor Controller, 150A, Hybrid
FLAT-BASE TYPE INSULATED PACKAGE INTELLIGENT POWER MODULE
Narrow Band High Power Amplifier, 400MHz Min, 470MHz …
400-470 MHZ 7 W 12.5 V, ROHS COMPLIANCE, 2 STAGE …
Narrow Band Medium Power Amplifier, 400MHz Min, 470MHz …
400-470 MHZ, 60 WATT, 12.5 V, 2 STAGE AMPLIFIER
Narrow Band High Power Amplifier, 440MHz Min, 520MHz …
440-520 MHZ 7W PORTABLE RADIO SILICON MOS FET POWER AMPLIFIER
Insulated Gate Bipolar Transistor, 1500A I(C), 3300V V(BR)CES, …
HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT MODULE
Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, …
HIGH POWER SWITCHING USE IGBT MODULE
Bridge Rectifier Diode, 3 Phase, 150A, 1600V V(RRM), …
MEDIUM POWER GENERAL USE INSULATED TYPE BRIDGE RECTIFIER